JPS6161250B2 - - Google Patents
Info
- Publication number
- JPS6161250B2 JPS6161250B2 JP52137474A JP13747477A JPS6161250B2 JP S6161250 B2 JPS6161250 B2 JP S6161250B2 JP 52137474 A JP52137474 A JP 52137474A JP 13747477 A JP13747477 A JP 13747477A JP S6161250 B2 JPS6161250 B2 JP S6161250B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- single crystal
- plane orientation
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000013078 crystal Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001953 recrystallisation Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000005162 X-ray Laue diffraction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13747477A JPS5470764A (en) | 1977-11-16 | 1977-11-16 | Recrystallization method for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13747477A JPS5470764A (en) | 1977-11-16 | 1977-11-16 | Recrystallization method for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5470764A JPS5470764A (en) | 1979-06-06 |
| JPS6161250B2 true JPS6161250B2 (en]) | 1986-12-24 |
Family
ID=15199449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13747477A Granted JPS5470764A (en) | 1977-11-16 | 1977-11-16 | Recrystallization method for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5470764A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414436U (en]) * | 1987-07-14 | 1989-01-25 |
-
1977
- 1977-11-16 JP JP13747477A patent/JPS5470764A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| JOURNAL OF APPLIED PHYSICS=1964 * |
| SOLID STATE PHYSICS=1975 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414436U (en]) * | 1987-07-14 | 1989-01-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5470764A (en) | 1979-06-06 |
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